Synthesis, characterization, measurement and effect of temperature on optical properties, thickness and band gap of metal chalcogenide thin films

Paper ID: EIJTEM_2025_12_3_33-40

Author's Name: Rohit Srivastava & Chandresh Kumar Gupta

Volume: 12

Issue: 3

Year: 2025

Page No: 33-40

Abstract:

Metal chalcogenides constitute a diverse family of semiconductor materials formed by the combination of metals with chalcogen elements (sulfur, selenium, and tellurium). These compounds have garnered significant attention in recent decades due to their remarkable electronic, optical, and structural properties that make them highly suitable for various optoelectronic applications. This comprehensive study presents detailed methodologies and experimental data for the characterization of metal chalcogenide thin films, focusing on optical properties, thickness measurement, band gap determination, structural analysis and the effects of temperature and pH on film properties. Metal chalcogenides, including CdS, CdSe, ZnS, ZnSe, CuInSe₂ (CIS) and Cu(In,Ga)Se₂ (CIGS), have been extensively characterized using various analytical techniques. The paper provides systematic experimental procedures, measurement protocols and comprehensive data sets that serve as reference standards for researchers in the field. Key findings include temperature-dependent band gap variations (-4.5×10⁻⁴ eV/K for CdS), pH-dependent morphological changes and correlation between deposition parameters and optical properties.

Keywords: Metal chalcogenides, thin films, optical characterization, band gap measurement, structural analysis, temperature effects, pH effects.

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