PHONONIC THERMAL PROPERTIES OF TWO-DIMENSIONAL MATERIALS

Paper ID: EIJTEM_2023_10_4_171-176

Author's Name: Kamlesh Kumar

Volume: 10

Issue: 4

Year: 2023

Page No: 171-176

Abstract:

Stanene-silicon carbide (Sn/SiC) is a two-dimensional hetero bilayer predicted by first principles calculations. Structure and electrical properties of Sn/SiC hetero bilayers are explored utilizing three stacking patterns. The Dirac cone is entirely preserved at the K point in this hetero bilayer stacking pattern, It has the widest energy band gap of any two-dimensional hetero structure based on stanene. For this result, biaxial strain and altering the spacing between layers of stanene and SiC may be employed. Low effective mass carriers (0.0145mo) are expected in the hetero bilayer to have a linear band dispersion relation. SiC monolayer retains some strong electrical features of Stanene and allows carriers to flow through the stanene layer simply based on its space charge distribution (SCC) and density of states (density of states (DOS). Stanene may then build a hetero bilayer on top of the 2D SiC layers, suggesting that 2D SiC would provide an effective substrate for stanene. According to our results, the Sn/SiC hetero bilayer may be useful in the development of high-speed nano electrical and spintronic devices in the future.

Keywords: thermal properties, two-dimensional materials

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